ADI ADL8105砷化镓单片微波集成电路低噪声宽带放大器解决方案

ADI公司的 ADL8105是砷化镓(GaAs)单片微波集成电路(MMIC) 假晶高电子迁移率晶体管(pHEMT)低噪声宽带放大器, 工作频率范围为5 GHz至20 GHz. 在12 GHz至17 GHz范围内,ADL8105提供27 dB典型增益,1.8 dB典型噪声系数和30.5 dBm典型输出三阶交调截点(OIP3)以及高达20.5 dBm的饱和输出功率(PSAT), 采用5 V电源电压时功耗仅为90 mA.可通过牺牲OIP3和输出功率(POUT)来降低功耗. ADL8105还具有内部匹配50 Ω的输入和输出. RFIN和RFOUT引脚均内部交流耦合,同时集成了偏置电感,使其非常适合基于表贴技术(SMT)的高容量微波无线电应用.ADL8105采用符合RoHS标准的2 mm × 2 mm 8引脚LFCSP封装.主要用在电信,卫星通信,军用雷达,气象雷达,电子战和仪器仪表.本文介绍了ADL8105主要特性,功能框图,典型应用电路图和推荐的功率管理电路,以及评估板ADL8105-EVALZ主要特性,电路图,PCB装配图和材料清单.

GaAs, pHEMT, MMIC, Low Noise Amplifier, 5 GHz to 20 GHz The ADL8105 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 5 GHz to 20 GHz.

The ADL8105 provides a typical gain of 27 dB at 12 GHz to 17 GHz, a 1.8 dB typical noise figure from 12 GHz to 17 GHz, a typical output third-order intercept (OIP3) of 30.5 dBm at 12 GHz to 17 GHz, and a saturated output power (PSAT) of up to 20.5 dBm, requiring only 90 mA from a 5 V supply voltage. The power dissipation can be lowered at the expense of OIP3 and output power (POUT). The ADL8105 also features inputs and outputs that are internally matched to 50 Ω. The RFIN and RFOUT pins are internally ac-coupled, and the bias inductor is also integrated, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.

The ADL8105 is housed in an RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP package.

ADL8105主要特性:

► Single positive supply (self biased)

► Gain: 27 dB typical at 12 GHz to 17 GHz

► OP1dB: 18 dB typical at 12 GHz to 17 GHz

► OIP3: 30.5 dBm ty...