Infineon IHW40N65R6 IGBT 3kW感应加热解决方案

Infineon公司的IHW40N65R6是新型650V 40A反向导通R6系列IGBT,在TO-247封装内集成了二极管,特别设计用于感应加热和谐振开关应用,开关频率高达100kHz.器件具有非常低的VCEsat 和Eoff 具有高耐用度和稳定温度特性,由于VCEsat正温度系数容易并联进行开关工作,频率范围20-75kHz.IGBT具有低的EMI,非常紧密的参数分布,最大工作结温TJ 为 175 °C.主要用在变频微波炉,智能电磁炉-精密加热控制.本文介绍了IHW40N65R6 IGBT主要特性和主要指标,框图,以及采用反向导通IGBT的3kW感应加热评估板EVAL-IHW65R62EDS06J主要特性,框图,电路图,材料清单和PCB设计图.

Reverse Conducting IHW40N65R6R6 650 V, 40 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology.

Thanks to best system performances and  high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies.

IHW40N65R6 IGBT主要特性:

Very low VCEsat and low Eoff

High ruggedness and stable temperature behavior

Easy parallel switching capability due to positive temperature coefficient in VCEsat

Frequency range 20-75 kHz

Low EMI

Very tight parameter distribution

Maximum operating TJ of 175 °C

IHW40N65R6主要优势:

Lowest losses on IGBT, high system efficiency for higher power output

Fast and easy replacement of predecessor R5 portfolio

High device reliability

Good EMI behaviour

IHW40N65R6应用:

Inverterized microwaves

Smart induction cooktop – precise heating control

图1. IHW40N65R6 IGBT框图

IHW40N65R6 IGBT主要参数:

IHW40N65R6 IGBT主要指标:

采用反向导通IGBT的3kW半桥感应加热评估板EVAL-IHW65R62EDS06J

Evaluation board of 650 V reverse conduting IGBT for induction heating application

This user guide (UG-2021-26) de...