TI UCC5870－Q1单路高效SiCMOSFET和IGBT栅极驱动方案

TI公司的UCC5870-Q1是单路高效高度可配置的单路栅极驱动器,主要用于电动汽车/混合动力汽车的大功率SiCMOSFET和IGBT的栅极驱动.功率晶体管的保护如基于并联电阻的过流,基于NTC的超温和DESAT检测,包括可选择软关断或两级断开.为了进一步降低应用尺寸,UCC5870-Q1集成了开关时的4A有源米勒箝位和驱动器未加电时的有源栅极下拉.集成的10位ADC能检测多达6个模拟输入和栅极驱动器温度,以增强系统管理.还集成了诊断和检测功能以简化ASIL-D兼容系统的设计.UCC5870-Q1的参数和特性阈值可通过SPI接口进行到底配置.器件的分离输出驱动器提供15A源和沉,3750-VRMS隔离.主要用在大功率IGBT和SiC MOSFET,HEV和EV牵引动力逆变器,HEV和EV功率模块.本文介绍了UCC5870-Q1主要特性,功能框图,简化电路图,规则SPI和菊花链SPI配置的系统配置图,应用电路图,以及评估模块UCC5870QDWJEVM-026主要特性,电路图和材料清单与PCB设计图.

The UCC5870-Q1 device is a functional safetycompliant, isolated, highly configureablesinglechannelgate driver targeted to drive high power SiCMOSFETs and IGBTs in EV/HEV applications. Powertransistor protections such as shunt resistor based

over-current, NTC based over-temperature, andDESAT detection, including selectable soft turn off ortwo-level turn off during these faults. To further reducethe application size, the UCC5870-Q1 integrates a 4Aactive Miller clamp during switching, and an activegate pull-down while the driver is unpowered. Anintegrated 10-bit ADC enables monitoring of up to 6analog inputs and the gate driver temperature forenhanced system management. Diagnostics anddetection functions are integrated to simplify thedesign of ASIL-D compliant systems. The parametersand thresholds for these features are configurable

using the SPI interface, which allows the device to beused with nearly any SiC MOSFET or IGBT.

UCC5870-Q1主要特性:

• Split output driver provide 15-A peak source and15-A peak sink currents

• Adjustable "on the fly" gate drive strength

• Interlock and shoot-through protection with150ns(max) propagation delay a...