NXP MC33GD3100单路IGBT栅极驱动器解决方案

NXP公司的MC33GD3100是高档单路IGBT栅极驱动器,集成了电流隔离和低开态电阻驱动晶体管,提供高充电和放电电流,低动态饱和电压,轨到轨电压控制,通过INTB引脚和SPI接口能管理严重故障并报告故障与状态.和安全等级ASIL D ISO 26262规范兼容,功率范围大于125kW,满足AEC-Q100 grade 1规范,主要用在汽车电子.本文介绍了MC33GD3100主要特性和优势,框图,简化应用框图以及半桥评估板FRDM-GD3100EVM主要特性和电路图.
The MC33GD3100 is an advanced single channel gate driver for IGBTs. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT stress during faults. Accurate and configurable under voltage lockout (UVLO) provides protection while ensuring sufficient gate drive voltage headroom.
The MC33GD3100 autonomously manages severe faults and reports faults and status via INTB pin and an SPI interface. It is capable of directly driving gates of most IGBTs. Self test, control and protection functions are included for design of high reliability systems (ASIL C/D). It meets the stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified.
MC33GD3100主要特性和优势:
• Compatible with current sense and temp sense IGBTs
• Fast short-circuit protection for IGBTs with current sense feedback
• Compliant with ASIL D ISO 26262 functional safety requirements
• SPI interface for safety monitoring, programmability and flexibility
• Integrated Galvanic signal isolation
• Integrated gate drive power stage capable of 10 A peak source and sink
• Interrupt pin for fast response to faults
• Compatible with negative gate supply
• Compatible with 200 V to 1700 V IGBTs, power range > 125 kW
• AEC-Q100 grade 1 qualified

图1.MC33GD3100框图

图2. MC33GD3100简化应用框图
半桥评估板FRDM-GD3100EVM...