Infineon 600V CoolGaN 3600W LLC DC/DC转换器解决方案

Infineon公司的IGT60R190D1S是600V CoolGaN™增强模式氮化镓(GaN)功率晶体管,它比硅器件具有基本优势,特别是更高的临界电场非常适合功率半导体器件,具有杰出动态开关电阻和更小电容,使得GaN HEMT更适合高速开关应用.GaN功率晶体管最重要的特性是反向恢复性能. Infineon公司的CoolGaN™晶体管没有少数载流子,没有体二极管,不会体现反向恢复.因此,应开关拓扑如图腾柱PFC能用来获得更高效率,例如用在数据中心和服务器电源,以便节省能量和降低营运资本(OPEX).IGT60R190D1S主要特性是增强模式晶体管(通常是OFF态),超快开关,没有反向恢复电荷,低栅极电荷和低输出电荷以及卓越的换向稳定性.器件的主要优势包括改善了系统效率和功率密度,具有更高的工作频率,更低的系统成本和降低EMI.主要用在基于半桥拓扑(图腾柱PFC,高频率LLC和反激)的消费电子SMPS和高密度充电器.本文介绍了氮化镓(GaN)功率晶体管主要特性和优势, IGT60R190D1S主要特性和优势与性能参数(TJ = 25 °C),以及3600W CoolGaN™演示板EVAL_3K6W_LLC_GAN主要特性和电性能指标,演示板所包括5个不同的板的电路图,材料清单和PCB设计图.

Gallium nitride (GaN) transistors offer fundamental advantages over silicon. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching applications. Gallium nitride transistors can then be operated with reduced dead-times which results in higher efficiency and enables passive cooling. Operation at high switching frequencies allows the volume of passive components to shrink which improves GaN HEMTs reliability and overall power density.

The most important feature of a GaN power transistor is its reverse recovery performance. As Infineons CoolGaN™ transistors have no minority carriers and no body diode they do not exhibit a reverse recovery. Therefore, hard-switching topologies such as totem-pole PFC can be employed to achieve higher efficiency, for example in datacenter and server power supplies, in order to...