On Semi NCP51561隔离5 kVRMS双路4.5A栅极驱动方案

On Semi公司的NCP51561是隔离双路栅极驱动器,分别具有4.5A.9A源和沉峰极电流,设计用于快速开关驱动功率MOSFET和SiC MOSFET功率开关.NCP51561提供短和匹配的传输延迟.从输入到每个输出的隔离电压为5 kVrms,两个输出驱动器间的内部功能隔离允许工作电压高达1500VDC.驱动器能用作两个低边,两个高边开关或有可编死区时间的半桥驱动器的任何可能的配置.NCP51561还提供其它重要的保护功能如对两个栅极驱动器的单独欠压锁住和死区调整功能.输出电源电压从9.5V到30V,8V MOSFET阈值,17 V UVLOSiC阈值.共模瞬态抗扰度CMTI大于200 V/ns,传输时延典型值为36ns:每路最大延迟匹配为5ns,脉宽失真最大为5ns.用户可编程输入逻辑,通过ANB可改变单输入或双输入模式,ENABLE或DISABLE模式,用户可编程死区时间.主要用在马达驱动,DC/DC和AC/DC电源中的隔离转换器,以及服务器,通信和工业基础设施,UPS和太阳能逆变器.本文介绍了NCP51561主要特性,简化框图,应用电路图以及评估板SECO-NCP51561XADW2GGEVB主要特性,框图,电路图,材料清单和PCB设计图.

The NCP51561 are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51561 offers short and matched propagation delays. Two independent and 5 kVrms internal galvanic isolation from input to each output and internal functional isolation between the two output drivers allows a working voltage of up to 1500 VDC. This driver can be used in any possible configurations of two low side, two high−side switches or a half−bridge driver with programmable dead time. An ENA/DIS pin shutdowns both outputs simultaneously when set low or high for ENABLE or DISABLE mode respectively. The NCP51561 offers other important protection functions such as independent under−voltage lockout for both gate drivers and a Dead Time adjustment function.

NCP51561主要特性:

• 4.5 A Peak Source, 9 A Peak Sink Output Current Capability

• Flexible: Dual Low−Side, Dual High−Side or Half−Bridge Gate Driver