On Semi NCP51561SiCMOSFET隔离栅极驱动器解决方案

On Semi公司的NCP51561是分别具有4.5A源电流和9A沉峰值电流的隔离双路栅极驱动器,电流隔离为5 kVrms.设计用来开速开关驱动功率MOSFET和SiCMOSFET功率晶体管.器件提供短和匹配的传输时延.从输入到每个输出的电流隔离为5 kVrms,而两个输出驱动器间的内部功能隔离允许工作电压高达1500VDC.该驱动器可配置成两个低边,两个高边开关或带可编死区时间的半桥驱动器.两个输出驱动器具有独立的UVLO保护,输出电源电压从9.5V到30V,8V为MOSFET,17V UVLO为SiC阈值.共模瞬态免疫度CMTI大于200 V/ns.传输时延典型为36ns:每路时延匹配最大为8ns,脉宽失真最大为8ns.用户可编输入逻辑,经由ANB为单路或双路输入模式.具有ENABLE 或DISABLE模式:用户可编死区,隔离和安全性.无铅器件.主要用在马达驱动,DC/DC和AC/DC电源中的隔离转换器,服务器,通信和工业基础设备以及UPS和太阳能逆变器.本文介绍了NCP51561主要特性,简化框图和应用电路,以及评估板SECO-NCP51561XADW2GGEVB主要特性,电路图,材料清单和PCB设计图.

The NCP51561 are isolated dual−channel gate drivers with4.5−A/9−A source and sink peak current respectively. They aredesigned for fast switching to drive power MOSFETs, and SiCMOSFET power switches. The NCP51561 offers short and matchedpropagation delays.

Two independent and 5 kVrms internal galvanic isolation from inputto each output and internal functional isolation between the two outputdrivers allows a working voltage of up to 1500 VDC. This driver can beused in any possible configurations of two low side, two high−sideswitches or a half−bridge driver with programmable dead time.

An ENA/DIS pin shutdowns both outputs simultaneously when setlow or high for ENABLE or DISABLE mode respectively.

The NCP51561 offers other important protection functions such asindependent under−voltage lockout for both gate drivers and a DeadTime adjustment function.

NCP51561主要特性:

• 4.5 A Peak Source, 9 A Peak Sink Output Current Capability

• Flexible: Dual Low−Side, Dual High−Side or Half−Bridge GateDriver

• Independent U...