TI LMG3425R050600V 50mΩGaN FET解决方案

TI公司的LMG3422R030是600V 50mΩ GaN-on-Si FET,集成了驱动器和保护功能,使设计者在电源系统中获得新的功率密度和效率. LMG3422R050集成的硅驱动器开关速度高达150V/ns.器件集成的精密栅极偏压可以得到比分立硅栅极驱动器更高的安全操作區域(SOA).这种集成以及相应的低电感封装,在硬开关电源拓扑中提供清晰的开关和最小的振铃.其它特性还包括用于EMI控制的可调栅极驱动强度,超温和带故障指示的鲁棒的过流保护,从而提供优化的BOM成本,PCB板尺寸和占位面积.先进的功率管理特性包括数字温度报告,TI理想二极管模式.GaN FET温度通过可变占空比PWM输出进行报告,使系统能最佳管理负载.理想二极管模式由于赋能了自适应死区时间控制而降低了3/4损耗,从而最大限度提高了效率.器件的开关频率为2MHz.主要用在高密度工业电源,太阳能逆变器和工业马达驱动以及不间断电源(UPS).本文介绍了LMG3425R050主要特性,简化框图,确定开关参数的电路,半桥应用电路图以及评估板LMG3422EVM-041主要特性,框图,电路图,LMG342XEVM-04X和LMG342X-BB-EVM连接图以及评估板LMG342XEVM-04X和LMG342X-BB-EVM材料清单.

The LMG342xR050 GaN FET with integrated driverand protection enables designers to achieve newlevels of power density and efficiency in powerelectronics systems.

The LMG342xR050 integrates a silicon driver thatenables switching speed up to 150 V/ns. TIsintegrated precision gate bias results in higherswitching SOA compared to discrete silicon gatedrivers. This integration, combined with our lowinductancepackage, delivers clean switching andminimal ringing in hard-switching power supplytopologies. Other features, including adjustable gatedrive strength for EMI control, overtemperature, and

robust overcurrent protection with fault indication,provide optimized BOM cost, board size, andfootprint.

Advanced power management features include digitaltemperature reporting and TIs ideal diode mode. Thetemperature of the GaN FET is reported through avariable duty cycle PWM output, which enables thesystem to optimally manage loading. Ideal diode

mode maximizes efficiency by reducing third-quadrantlosses by enabling adaptive dead-t...