TI UCC21732 SiC－IGBT 10A单路栅极驱动器解决方案

TI公司的UCC21732是用于SiC/IGBT的10A源/沉增强隔离的单路栅极驱动器,距主动保护,隔离的模拟检测和高的CMTI.器件工作电压高达2121V DC,同时具有先进的保护特性,业界最好的动态性能和鲁棒性.输入侧和输出侧采用SiO2电容隔离技术,支持高达1.5-kVRMS工作电压, 12.8-kVPK浪涌免疫度,隔离层寿命大于40年,低部件/部件间歪斜,大于150V/ns的共模噪音抗扰度(CMTI). UCC21732包括最新的保护特性如快速过流和短路检测,支持并联电流检测,故障报告,有源米勒箝位,输入和输出电源欠压锁住(UVLO),以优化SiC和IGBT开关性能和鲁棒性.和PWM传感器的隔离模拟能用来检测温度或电压,进一步增加了驱动器的多样性,简化系统设计,尺寸和成本.工作结温–40C 至150C.主要用在电动汽车的牵引逆变器,板上充电器和充电桩,用于HEV/ EV的DC/DC转换器,工业马达驱动,服务器,通信和工业电源以及不间断电源(UPS).本文介绍了UCC2173主要特性,功能框图,典型应用电路图以及评估板UCC21732QDWEVM-025主要特性和电性能指标,框图,电路图,多种测试建立图,材料清单和PCB设计图.

The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21732 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).

The UCC21732 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers versatility and simplifying the system design effort, size...