Infineon 2ED2304S06F 650V半桥栅极驱动器解决方案

Infineon公司的2ED2304S06F是650V半桥栅极驱动器,采用该公司的薄膜SOI技术,具有极好的鲁棒性和噪音免疫性.施密特触发逻辑输入和标准的CMOS或LSTTL逻辑兼容,直到3.3V.输出驱动器具有高脉冲电流缓冲器级,以最大限度降低驱动器的交叉导通.浮点通路用来驱动高边配置的N沟功率MOSFET或IGBT,电压高达650V.此外,离线的箝位功能提供固有的保护功能.输出源/沉电流+0.36 A/-0.7 A,集成了超快低RDS(ON)的自举二极管(BSD),负瞬态电压高达-100V(脉冲宽度达300ns),典型传输时延10ns, dV/dt免疫度±50 V,栅极驱动器电源从10V到20V.两个通路欠压锁住,3.3V,5V和15V输入逻辑兼容,RoHS兼容.主要用在马达驱动,通用逆变器,电冰箱压缩机,通信和照明的离线AC/DC电源的半桥和全桥转换器.本文介绍了2ED2304S06F主要特性,典型应用框图,功能框图和 REF-Vacuum-C101-2ED SOI驱动器和真空应用参考设计主要特性和指标,框图,电路图,材料清单和PCB设计图.

The 2ED2304S06F is a 650-V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. Additionally, the offline clamping function provides an inherent protection of the parasitic turn-on by floating gate conditions when IC is not supplied.

2ED2304S06F主要特性:

• Infineon thin-film-SOI-technology

• Fully operational to +650 V

• Floating channel designed for bootstrap operation

• Output source/sink current capability +0.36 A/-0.7 A

• Integrated Ultra-fast, low RDS(ON) Bootstrap Diode

• Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology