TI LMG1210 200VGaN FET电源参考设计TIDA－01634

TI公司的LMG1210是200V半桥高性能氮化镓场效应晶体管(GaN FET)驱动器,超高速度可到50MHz,传输时延10ns,脉冲宽度≥ 3 ns,高边和低边匹配1.5ns,峰值源电流1.5A,主要用在高速DC/DC转换器,RF包络跟踪,D类音频放大器和E类无线充电.本文介绍了LMG1210主要特性,框图和应用框图,以及高速DC/DC转换器GaN电流级参考设计TIDA-01634主要特性,框图以及主要指标,电路图,材料清单和PCB设计图.
The LMG1210 is a 200-V, half-bridge highperformance gallium nitride field effect transistor(GaN FET) driver designed for applications requiringhigh switching speed, minimized dead time, as wellas high efficiency. Drive voltage is preciselycontrolled by an internal LDO to 5 V when higherauxiliary voltages are used.
The LMG1210 GaN driver is designed for ultra-highfrequency applications and features adjustable deadtimecapability, very small propagation delay, as wellas 1.5-ns high-side low-side matching to optimizesystem efficiency.
Additional parasitic capacitance across the GaN FETis minimized to less than 1 pF to reduce additionalswitching losses. An external bootstrap diode is usedto charge the high-side bootstrap capacitor to allowoptimal selection for the circuit operating conditions.
An internal switch turns the bootstrap diode off whenthe low side is not on, effectively preventing the highsidebootstrap from overcharging and minimizing thereverse recovery charge when a silicon diode is usedas the bootstrap diode.
LMG1210主要特性:
1• Ultra-High Speed Operation of 50 MHz
– 10 ns Typical Propagation Delay
– 1.5 ns High-Side to Low-Side Matching
– Pulse Width ≥ 3 ns
• 1.5-A Peak Source and 3.1-A Peak Sink Currents
• Adjustable Dead-Time Control Feature
• Highest Slew Rate Immunity in Industry of 300V/ns
• External Bootstrap Diode For Flexibility
• High-Side to Low-Side Capacitance Less Than 1pF
• UVLO and Overtemperature Protection
• Low-Inductance WQFN Package
LMG1210应用:
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