TI TPS7H3301－SP耐辐射DDR端电源解决方案

TI公司的TPS7H3301-SP是内置了VTTREF缓冲器的TID和SEE耐辐射(65 MeV-cm2/mg)双数据速率(DDR) 3A电源稳压器,和DDR,DDR2.DDR3,DDR4和低功耗JEDEC标准兼容,输出电压0.5V到1.75V,3A沉和源电流,精度±20-mV,主要用在如单板计算机,固态记录仪和有效载荷处理中的DDR端应用.本文介绍了TPS7H3301-SP主要特性,功能框图,典型应用电路以及TPS7H3301-SP评估板(EVM)主要特性,框图,电路图和材料清单.
The TPS7H3301-SP is a TID and SEE radiation-hardened double data rate (DDR) 3-A termination regulator with built-in VTTREF buffer. The regulator is specifically design to provide a complete, compact, low-noise solution for space DDR termination applications such as single board computers, solid state recorders, and payload processing.
The TPS7H3301-SP supports and is compliant to DDR, DDR2, DDR3, DDR4, and associated low-power JEDEC specifications. The fast transient response of the TPS7H3301-SP VTT regulator allows for a very stable supply during read/write conditions. During transients, the fast tracking feature of the VTTREF supply minimizes any voltage offset between VTT and VTTREF. To enable simple power sequencing, both an enable input and a power-good output (PGOOD) have been integrated into the TPS7H3301-SP. The PGOOD output is open-drain so it can be tied to multiple open-drain outputs to monitor when all supplies have come into regulation. The enable signal can also be used to discharge VTT during suspend to RAM (S3) power down mode.
TPS7H3301-SP主要特性:
5962R14288:
Radiation Hardness Assurance (RHA) Qualified to Total Ionizing Dose (TID) 100 krad(Si)
Single Event Latch-Up (SEL), Single Event Gate Rupture (SEGR), Single Event Burnout (SEB) Immune to LET = 65 MeV-cm2/mg
SET, SEFI, SEU Immune to 65 MeV-cm2/mg
Supports DDR, DDR2, DDR3, DDR3LP, and DDR4 Termination Applications and is Compliant to JEDEC Standards
Input Voltage: Supports a 2.5-V and 3.3-V Rail
Separate Low-Voltage Input (VLDOIN) Down to .9 V for Improved Power Efficiency(2)
3-A Sink and Sou...