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Infineon公司的CoolMOS™ C7是依据超级结(SJ)原理设计的高压功率MOSFET,它的导通电阻(RDS(on)低于1Ohm*mm²(40毫欧姆),VDS大于650V,MOSFET dv/dt可达到120V/ns,非常适合用于硬和软开关(PFC和高性能LLC),如大功率高性能开关电源如计算机,服务器,通信设备,UPS和太阳能电源的PFC级和PWM级.本文介绍了IPP60R040C7主要特性,性能参数,以及600W半桥LLC评估板主要特性,电路图,主要元件分布图和PCB设计图.
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Infineon公司的CoolMOS™ C7是依据超级结(SJ)原理设计的高压功率MOSFET,它的导通电阻(RDS(on)低于1Ohm*mm²(40毫欧姆),VDS大于650V,MOSFET dv/dt可达到120V/ns,非常适合用于硬和软开关(PFC和高性能LLC),如大功率高性能开关电源如计算机,服务器,通信设备,UPS和太阳能电源的PFC级和PWM级.本文介绍了IPP60R040C7主要特性,性能参数,以及600W半桥LLC评估板主要特性,电路图,主要元件分布图和PCB设计图.
CoolMOS™ C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.
600V CoolMOS™ C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.
The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
IPP60R040C7主要特性:
• Suitable for hard and soft switching (PFC and high performance LLC)
• Increased MOSFET dv/dt ruggedness to 120V/ns
• Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
• Best in class RDS(on) /package
• Qualified for industrial grade applications according to JEDEC (J-STD20and JESD22)
IPP60R040C7优势:
• Increased economies of scale by use in PFC and PWM topologies in theapplication
• Higher dv/dt limit enables faster switching leading to higher efficiency
• Enabling higher system efficiency by lower switching losses
• Increased power density solutions due to smaller packages
• Suitable for applications such as server, telecom and solar
• Higher switching frequencies possible without loss in efficiency due tolow Eoss and Qg
IPP60R040C7应用:
PFC stages and PWM stages (TTF, LLC) for high power/performanceSMPS e.g. Computing, Server, Telecom, UPS and Solar.
IPP60R040C7主要性能参数:
采用600 V CoolMOS™ C7的600W半桥LLC评估板
The present 600 W Evaluation Board is a great example of a full Infineon solution, includi...
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